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Point Defects in Semiconductors and Insulators Determination of Atomic and Electronic Structure from Paramagnetic Hyperfine Interactions

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Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

22.01.2003

Abbildungen

XI, 492 p.

Herausgeber

Hans-Joachim Queisser

Verlag

Springer Berlin

Seitenzahl

492

Maße (L/B/H)

24,1/16/3,2 cm

Gewicht

922 g

Auflage

2003

Sprache

Englisch

ISBN

978-3-540-42695-0

Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

22.01.2003

Abbildungen

XI, 492 p.

Herausgeber

Hans-Joachim Queisser

Verlag

Springer Berlin

Seitenzahl

492

Maße (L/B/H)

24,1/16/3,2 cm

Gewicht

922 g

Auflage

2003

Sprache

Englisch

ISBN

978-3-540-42695-0

Herstelleradresse

Springer-Verlag KG
Sachsenplatz 4-6
1201 Wien
AT

Email: GPSR Kontakt

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  • Produktbild: Point Defects in Semiconductors and Insulators
  • Produktbild: Point Defects in Semiconductors and Insulators
  • 1. Introduction.- 1.1 Structure of Point Defects.- 1.2 Basic Concepts of Defect Structure Determination by EPR.- 1.3 Superhyperfine and Electronic Structures of Defects in Solids.- 2. Fundamentals of Electron Paramagnetic Resonance.- 2.1 Magnetic Properties of Electrons and Nuclei.- 2.2 Electrons and Nuclei in an External Magnetic Field.- 2.3 Some Useful Relations for Angular Momentum Operators.- 2.4 Time Dependence of Angular Momentum Operators and Macroscopic Magnetization.- 2.5 Basic Magnetic Resonance Experiment.- 2.6 Spin-Lattice Relaxation.- 2.7 Rate Equations for a Two-Level System.- 2.8 Bloch Equations.- 2.9 Conventional Detection of Electron Paramagnetic Resonance and its Sensitivity.- 3. Electron Paramagnetic Resonance Spectra.- 3.1 Spin Hamiltonian.- 3.2 Electron Zeeman Interaction.- 3.3 g-Factor Splitting of EPR Spectra.- 3.4 Fine-Structure Splitting of EPR Spectra.- 3.5 Hyperfine Splitting of EPR Spectra.- 3.6 Superhyperfine Splitting of EPR Spectra.- 3.7 Inhomogeneous Line Widths of EPR Lines.- 4. Optical Detection of Electron Paramagnetic Resonance.- 4.1 Optical Transitions of Defects in Solids.- 4.2 Spectral Form of Optical Transitions of Defects in Solids.- 4.3 EPR Detected with Magnetic Circular Dichroism of Absorption Method.- 4.4 MCDA Excitation Spectra of ODEPR Lines (MCDA “Tagged” by EPR).- 4.5 Spatially Resolved MCDA and ODEPR Spectra.- 4.6 Measurement of Spin-Lattice Relaxation Time T1with MCDA Method.- 4.7 Determination of Spin State with MCDA Method.- 4.8 EPR of Ground and Excited States Detected with Optical Pumping.- 4.9 EPR Optically Detected in Donor-Acceptor Pair Recombination Luminescence.- 4.10 Optically Detected EPR of Triplet States.- 4.11 ODEPR of Trapped Excitons with MCDA Method.- 4.12 Sensitivity of ODEPR Measurements.- 4.13Structural Information from Forbidden Transitions in MCDA-EPR Spectra.- 4.14 Spatial Correlation Between Defects by Cross-Relaxation-Spectroscopy.- 4.15 High-Field ODEPR/ODENDOR.- 5. Electron Nuclear Double Resonance.- 5.1 The Resolution Problem, a Simple Model.- 5.2 Type of Information from EPR and NMR Spectra.- 5.3 Indirect Detection of NMR, Double Resonance.- 5.4 Examples of ENDOR Spectra.- 5.5 Relations Between EPR and ENDOR Spectra, ENDOR-Induced EPR.- 5.6 Electron Nuclear Nuclear Triple Resonance (Double ENDOR).- 5.7 Temperature Dependence and Photo-Excitation of ENDOR Spectra.- 5.8 Stochastic ENDOR.- 6. Analysis of ENDOR Spectra.- 6.1 Qualitative Analysis of ENDOR Spectra.- 6.2 Quantitative Analysis of ENDOR Spectra.- 7. Electrical Detection of Electron Paramagnetic Resonance.- 7.1 Experimental Methods to Detect EDEPR.- 7.2 Experimental Observation of EDEPR.- 7.3 The Donor-Acceptor Pair Recombination Model.- 7.4 On the Role of the Electron Irradiation for the Donor EPR in Silicon.- 7.5 Spatial Resolution and Low Frequency EDEPR.- 7.6 Electrical Detection of ENDOR.- 7.7 Concentration and Temperature Dependence of the EDEPR Signals.- 7.8 Further Spin-Dependent Recombination Models.- 8. Theoretical ab initio Calculations of Hyperfine Interactions.- 8.1 Electron States in Solids.- 8.2 Computational Methods for Deep Point Defects.- 8.3 Hyperfine Interactions.- 8.4 Deep Point Defects in Semiconductors and Insulators.- 8.5 Shallow Defects: The Effective Mass Approximation and Beyond.- 8.6 Conclusions.- 9. Experimental Aspects of Optically Detected EPR and ENDOR.- 9.1 Sensitivity Considerations.- 9.2 ODMR Spectrometers Monitoring Light Emission.- 9.3 ODMR Spectrometers Monitoring Magnetic Circular Properties of Absorption and Emission.- 9.4 Experimental Details of the Components of an MCDA/MCPE ODMR Spectrometer.- 9.5 High Frequency ODEPR/ODENDOR Cavities.- 9.6 High Pressure Photoluminescence-Detected EPR.- Appendices.- References.